Oxide Thin Film Transistors (Oxide TFTs)

Cross-section schematic of oxide TFT	Transfer characteristic

Technology:

Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN_x/SiO₂/SiN_x/SiO₂ passivation layers are developed.

Advantages:

The resulting a-IGZO TFTs exhibit high reliability against bias stress and good electrical performance.

Applications:

Act as driving devices in the next generation flat panel displays.