Low Temperature Poly-Si (LTPS) Thin Film Transistors (TFTs)

 
LTPS MIUC TFTs

3-inch AMOLED panel	Shift register test results

Technology:

Unilaterally crystallized poly-Si contains less nickel than other MIC technologies. There are no major grain boundaries inside the channel region.

TFT performance is much better than MIC/MILC LTPS TFTs.

Advantages:

Fast crystallization, location defined grain, large field effective mobility and good stability.

Applications:

Driving circuit and pixel switch for AMOLED displays

Bridged Grain (BG) Poly-Si TFTs
 

Photoresist grating for BG doping	Typical Vg-Id characteristics

Technology:

Selectively doped region functioned as bridges to link the grains in poly-Si. The performance of BG-TFTs can be greatly improved.

Advantages:

Low-cost simple process, love leakage, large on-state current, high on-off ratio and good uniformity.

Applications:

AMOLED displays,pixel switches and driving circuits

Tech-Transfer Status:

Patent Pending:

Hoi Sing Kwok, Man Wong, Zhiguo Meng, Shuyun Zhao: Polycrystalline silicon thin film transistors with bridged-grain structures US 2010/0171546 A1